? 2013 ixys corporation, all rights reserved ds100534b(04/13) high voltage power mosfets features z high blocking voltage z high voltage package z fast intrinsic diode z low package inductance advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge z pulse circuits IXTA4N150HV ixtt4n150hv v dss = 1500v i d25 = 4a r ds(on) 6 n-channel enhancement mode fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1500 v v dgr t j = 25 c to 150 c, r gs = 1m 1500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 12 a i a t c = 25c 4 a e as t c = 25c 350 mj dv/dt i s i dm , v dd v dss ,t j 150 c 5 v/ns p d t c = 25 c 280 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c weight to-263 2.5 g to-268 4.0 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1500 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 10 a t j = 125 c 100 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 6 preliminary technical information g = gate d = drain s = source tab = drain to-268 g d (tab) s g s to-263 d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA4N150HV ixtt4n150hv ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. to-268 (hv) outline pin: 1 - gate 2 - source 3 - drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 2.8 4.6 s c iss 1576 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 105 pf c rss 35 pf t d(on) 19 ns t r 23 ns t d(off) 42 ns t f 22 ns q g(on) 44.5 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 7.7 nc q gd 21.7 nc r thjc 0.45 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 0.9 s i rm 15.0 a q rm 6.7 c i f = 2a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 (external) prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-263 (hv) outline pin: 1 - gate 2 - source 3 - drain
? 2013 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 4 8 1216202428 v ds - volts i d - amperes v gs = 10v 7v 5 v 4 v 6 v fig. 2. output characteristics @ t j = 125oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 4 v 5v fig. 3. r ds(on) normalized to i d = 2a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 4a i d = 2a fig. 4. r ds(on) normalized to i d = 2a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.00.51.01.52.02.53.03.54.04.55.0 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes IXTA4N150HV ixtt4n150hv
ixys reserves the right to change limits, test conditions, and dimensions. IXTA4N150HV ixtt4n150hv fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 750v i d = 2a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1000 10000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms fig. 11. breakdown and threshold voltages vs. junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv dss & v gs(th) - normalized bv dss v gs(th)
? 2013 ixys corporation, all rights reserved ixys ref: t_4n150 (4a) 9-12-12-c fig. 13. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w IXTA4N150HV ixtt4n150hv
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